PDS2305 mosfets equivalent, p-channel mosfets.
* -20V,-11A, RDS(ON) =16mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications
.
SOP8 Pin Configuration DDD D
G SSS
G
D S
BVDSS -20V
RDSON 16mΩ
ID -11A
Features
* -20V,-11A, RDS(ON) =16mΩ@V.
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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